The Defects in Semiconductors Conference provides a forum for presentation and discussion of the latest research developments concerning the effects of extended and point defects on the electronic, vibrational and structural properties of bulk semiconductors and low dimensional semiconductor structures. The conference brings together leading scientists from academia, national laboratories, and industry to discuss the properties of defects in a broad range of semiconductor materials including elemental semiconductors, conventional compound semiconductors, group III-nitrides, wide gap semiconductors, spintronic materials, and spatially confined semiconductor systems. Topics include hydrogen related defects, high energy irradiation induced defects, stoichiometry related native defects, and doping related point and extended defects. A balance between different experimental techniques and theoretical approaches provides a comprehensive outlook on the most important issues in the field. In addition to the invited speakers, graduate students and young researchers have an opportunity to present their newest, unpublished results in poster sessions.