Redoubled effort in energy efficiency motivates research in a tremendously broadened variety of semiconductor materials. The prospect of superior performance is weighed against cost and availability and, therefore, control and manageability of defects gain preeminent relevance. We therefore call for a meeting of leading experts from industry, academia, and national laboratories in the well-tested format of a Gordon Research Conference on the topic of defects in bulk and nanostructured semiconductor material systems. The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods. To further the informal exchange of hot topics and yet unpublished results, we limit the program to some twenty invited talks and additional contributed posters with ample discussion time. To protect your IP rights, no recordings will be allowed and no proceedings will be disseminated. We particularly solicit attendance by graduate students, post-docs, and junior scientists in the field. For those who have attended in the past, please note our new New England location.