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Defects in Wide Bandgap Materials
- P. Wolff - NEC, Discussion Leader
- T. A. Kennedy - NRL, "Mn impurity in ZnS nanocrystals"
- S. Rand - Michigan, "Optical and magnetic resonance of N-V center in diamond"
- J. Langer - IFPAN, Discussion Leader
- A. Suchocki - IFPAN, Poland, "Bistable defects for optical storage"
- P. Thibado - NRL, "Self assembled dots, dislocations via STM"
- H. Salemink - IBM, "Epi semiconductors: interfaces, alloy fluctuations, dopants"
- K. Cho - MIT, "Theory, STM signature of As antisite defect in GaAs"
Silicon: Dopants and Impurities
- R. Newman - Imperial College, Discussion Leader
- S. Pantelides - Vanderbilt, "Theory, oxygen in silicon"
- T. Gregorkiewicz - Amsterdam, "EPR and ENDOR of H passivated donors in Si"
- G. Weyer - Aarhus, "High vacancy concentrations in N+ silicon"
Defects in Processing
- P. Griffin - Stanford, Discussion Leader
- Y. Mochizuki - NEC, "Plasma processing induced defects in III-Vs"
- J. M. Poate - AT&T, "Transient enhanced diffusion in silicon"
- K. Kimmerling - MIT, Discussion Leader
- O. W. Holland - ORNL, "Defect engineering in the processing of SOI"
Silicon/Silicon Dioxide Interface
- F. Koch - Munich, Discussion Leader
- R. McFeely - IBM, "Interpretation of Si/SiO2 photoemission"
- M. Hybertsen - AT&T, "Theory, Electronic and atomic structure in Si/SiO2"
Grain Boundary Defects
- N. H. Nickel - Xerox, "Polycrystalline silicon"
- G. D. Watkins -Lehigh, "H defects in poly CVD diamond"
Gallium Nitride
- J. Bernholc - NCSU, Discussion Leader
- T. Suski - Berkeley, UNIPRESS, "Yellow PL in GaN, high pressure studies"
- J. Neugebauer - Xerox, "Theory, H in GaN"
- B. K. Meyer - Garching, Discussion Leader
- M. S. Brandt - Munich, "Spin dependent transport in GaN LEDs"
- W. K. Goetz - Xerox, "DLTS and PL in GaN"
Extended Defects/Electronic Properties
- E. Fitzgerald - MIT, Discussion Leader
- L. P. Tilly - IBM, "Electronic/optically active dislocations in GeSi"
- J. C. Spence - ASU, "Theory, Dislocations:Motion and electronic states in Si"
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