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Point and Line Defects in Semiconductors

Gordon Research Conference

July 12 - 17, 1998
Chair Chris G. Van de Walle
Vice Chair Thomas A. Kennedy
Colby-Sawyer College
541 Main Street
New London, New Hampshire, United States
 Venue and Travel Information

Conference Program

Sunday 7:30 pm Dislocations in epitaxial strained layers

Discussion leader: Patricia Mooney (IBM)
  • Eugene Fitzgerald (MIT)
    Defect control in SiGe/Si: the pathway to monolithic integration
  • Klaus Schwarz (IBM)
    Computational studies of dislocation interactions in a strained layer
Monday 9:00 am Hydrogen implantation and defect formation

Discussion leader: Leonard Feldman (Vanderbilt)
  • Brian Bech Nielsen (Aarhus)
    Hydrogen defects in proton-implanted silicon
  • Yves Chabal (Lucent)
    Infrared spectroscopy of silicon defects, platelets and exfoliation upon hydrogen implantation and remote plasma hydrogenation
Discussion leader: James Chadi (NEC)
  • Fernando Reboredo (Vanderbilt)
    Nucleation and growth of ordered hydrogen-assisted platelets in silicon
Monday 7:30 pm Hydrogen complexes in silicon

Discussion leader: Michael Stavola (Lehigh)
  • Rhian Pritchard (Imperial College)
    Lattice location of hydrogen molecules in crystalline silicon
  • Joerg Weber (MPI Stuttgart)
    Transition-metal/hydrogen complexes in Si
Tuesday 9:00 am Defects and isotopic control in diamond

Discussion leader: George Watkins (Lehigh)
  • Mark Newton (Oxford)
    Magnetic resonance and optical studies of vacancies and interstitals in diamond
  • Joerg Wrachtrup (Chemnitz)
    Scanning confocal optical microscopy and magnetic resonance of single defects in diamond
Discussion leader: Gordon Davies (King's College)
  • Anant Ramdas (Purdue)
    Vibrational and electronic excitations in isotopically controlled diamonds
Tuesday 7:30 pm Defects and complexes in III-V compounds

Discussion leader: Jerzy Langer (IFPAN)
  • Kazumi Wada (NTT)
    Defects in plasma-irradiated GaAs
  • Matt McCluskey (Xerox)
    Local vibrational modes under pressure
Wednesday 9:00 am Point defects and dopant impurities in GaN

Discussion leader: Evan Glaser (NRL)
  • Kimmo Saarinen (Helsinki)
    Vacancy defects in GaN studied by positron annihilation spectroscopy
  • Christian Wetzel (Meijo)
    Raman spectroscopy and large-pressure studies of donors in GaN
Discussion leader: Eugene Haller (Berkeley)
  • Manfred Deicher (Konstanz)
    Perturbed Angular Correlation (PAC) spectroscopy, a microscopic tool for the study of defects in semiconductors
Wednesday 7:30 pm Extended defects in GaN

Discussion leader: James Speck (UCSB)
  • Zuzanna Lilienthal-Weber (Berkeley)
    Formation mechanisms of extended defects and nanotubes in GaN
  • Malcolm Heggie (Sussex)
    First-principles studies of dislocations and domain boundaries in GaN
Thursday 9:00 am Diffusion and process-induced defects in Si

Discussion leader: Ulrich Gösele (MPI Halle)
  • Hans Gossmann (Lucent)
    Interaction of dopants with intrinsic point defects in Si
  • Hartmut Bracht (Berkeley)
    Self-diffusion in silicon studied with isotopically controlled heterostructures
Discussion leader: Sokrates Pantelides (Vanderbilt)
  • Tomas Diaz de la Rubia (Livermore)
    Theoretical studies of diffusion during silicon processing
Thursday 7:30 pm After Banquet Presentation

  • L.W. Barr (Paisley)
    Know How; 101 years of progress in Solid State Diffusion

Conference Links

Conference History
Additional Fee Info

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